Intel First to Demonstrate Working
45nm Chips; New Technology Will Improve Performance and Energy Efficiency of
Future Intel Platforms
Intel Corporation today announced it has become the first company to reach an
important milestone in the development of 45 nanometer (nm) logic technology.
Intel has produced what are believed to be the first fully functional SRAM
(Static Random Access Memory) chips using 45nm process technology, its
next-generation, high-volume semiconductor manufacturing process.
Achieving this milestone means Intel is on track to manufacture chips with
this technology in 2007 using 300mm wafers, and continues the company's focus on
pushing the limits of Moore's Law, by introducing a new process generation every
Today, Intel leads the industry in volume production of semiconductors using
65nm process technology, with two manufacturing facilities making 65nm chips in
Arizona and Oregon and two more coming online this year in Ireland and Oregon.
"Being first to high volume with 65nm process technology and the first with a
working 45nm chip highlights Intel's leadership position in chip technology and
manufacturing," said Bill Holt, vice president, general manger, Intel Technology
and Manufacturing Group. "Intel has a long history of translating technology
leaps into tangible benefits that people appreciate. Our 45nm technology will
provide the foundation for delivering PCs with improved performance-per-watt
that will enhance the user experience."
Intel's 45nm process technology will allow chips with more than five times
less leakage power than those made today. This will improve battery life for
mobile devices and increase opportunities for building smaller, more powerful
The 45nm SRAM chip has more than 1 billion transistors. Though not intended
as an Intel product, the SRAM demonstrates technology performance, process yield
and chip reliability prior to ramping processors and other logic chips using the
45nm manufacturing process. It is a key first step in the march toward
high-volume manufacturing of the world's most complex devices.
In addition to the manufacturing capabilities of its D1D facility in Oregon,
where the initial 45nm development efforts are underway, Intel has announced two
high-volume fabs under construction to manufacture chips using the 45nm process
technology: Fab 32 in Arizona and Fab 28 in Israel.
Intel, the world leader in silicon innovation, develops technologies,
products and initiatives to continually advance how people work and live.
Additional information about Intel is available at www.intel.com/pressroom.